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Theoretical study of advanced fieldeffect transistors based on alternative channel materials for supply voltage reduction.

机译：基于替代沟道材料以降低电源电压的先进场效应晶体管的理论研究。

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作者
Lu, Low Kain.;
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作者单位

National University of Singapore (Singapore).;

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授予单位 National University of Singapore (Singapore).;
学科 Electrical engineering.
学位 Ph.D.
年度 2015
页码 173 p.
总页数 173
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors [J] . Jone F. Chen, Dao-Hong Yang, Chih-Yung Lin, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第4B期

机译：迁移率降低和电源电压对高级p沟道金属氧化物半导体场效应晶体管的负偏压温度不稳定性的影响
2. Theoretical investigation of GaAsBi/GaAsN tunneling fieldeffect transistors with type-Ⅱ staggered tunneling junction [J] . Yibo Wang, Yan Liu, Genquan Han, Superlattices and microstructures . 2017,第JUNa期

机译：Ⅱ型交错隧穿结的GaAsBi / GaAsN隧穿场效应晶体管的理论研究
3. Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths [J] . Ahmed Sheikh, Shawkat Mashiyat, Chowdhury Md. Iramul, Micro & Nano Letters, IET . 2015,第10期

机译：栅介电材料对不同沟道长度的弹道肖特基势垒石墨烯纳米带场效应晶体管和碳纳米管场效应晶体管电流-电压特性的依赖性
4. Study of HTO-based alternative gate oxides for high voltage transistors on advanced eNVM technology [C] . Dann Morillon, Clément Pribat, Franck Julien, IEEE International Integrated Reliability Workshop . 2017

机译：基于高级eNVM技术的基于HTO的高压晶体管替代栅氧化物的研究
5. Surface and interface modification of alternative semiconductor materials for advanced transistors [D] . Jiang, Qi 2009

机译：先进晶体管的替代半导体材料的表面和界面改性
6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

机译：基于Ω型栅极有机铁电P（VDF-TrFE）场效应晶体管的低可编程电压非易失性存储器件使用p型硅纳米线通道
7. THEORETICAL STUDY OF ADVANCED FIELD-EFFECT TRANSISTORS BASED ON ALTERNATIVE CHANNEL MATERIALS FOR SUPPLY VOLTAGE REDUCTION [O] . LOW KAIN LU 2015

机译：基于交替通道材料的先进场效应晶体管降压的理论研究

Theoretical study of advanced fieldeffect transistors based on alternative channel materials for supply voltage reduction.

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