Different threshold value voltage is a position in pmos - transistors by means of different production of a channel half conductor material

摘要

A method with:Forming a threshold value voltage of an adjusting ends semiconductor alloy on a first semiconductor region, while a second semiconductor region is masked, wherein the forming threshold value voltage of an adjusting ends semiconductor alloy form of a silicon - and germanium semiconductor material containing comprises;Forming a first gate electrodes structure of a first p - channel transistor with a first gate length by means of the first semiconductor region, the end of an adjusting the threshold value voltage has semiconductor alloy;Forming a second gate electrodes structure of a second p - channel transistor with a second gate length which is smaller than the first gate length, on the second semiconductor region, wherein the first and second gate electrodes structure a dielectric material with a large ε, wherein the second gate length 50 nm or less;Performing a pans implantation sequence in such a way that the maximum when endo animal substance concentration before forming the first and second gate electrodes structure is adjusted;Forming a first drain - and said source region in the first semiconductor region; andForming a second drain - and said source region in the second semiconductor region, wherein the first and second drain - and source regions have the same conductivity type.