首页> 外国专利> Cost a method for forming of highly dense passive capacitors for replacing discrete capacitors with the use of a least-cost modular 3d - wafer - wafer - integration scheme

Cost a method for forming of highly dense passive capacitors for replacing discrete capacitors with the use of a least-cost modular 3d - wafer - wafer - integration scheme

机译:成本最低的模块化3D-晶圆-晶圆-集成方案形成高密度无源电容器的方法来代替分立电容器

摘要

Passive 3d - ic - capacitor stack of high density and a method for the integration of capacitors and integrated circuits in a wafer - wafer - bonding process, the integration of the capacitors, are formed on a wafer, alone or with active devices, with one or more integrated circuits on one or more additional wafers, the process can be stacked gemäßdem. The wafer - wafer - bonding takes place preferably by means of thermocompression, wherein grinding and chemically - mechanical polishing be used in order to simplify aspects of the manufacturing process. Various features and alternative embodiments.
机译:高密度无源3d-ic-电容器叠层以及将电容器和集成电路集成到晶片中的方法-晶片-键合工艺,电容器的集成在晶片上单独或与有源器件一起形成。或在一个或多个其他晶片上集成多个集成电路,则可以将该工艺堆叠在gemäßdem上。晶片-晶片-键合优选地通过热压来进行,其中使用研磨和化学-机械抛光以简化制造过程的各个方面。各种特征和替代实施例。

著录项

  • 公开/公告号DE112010000142T5

    专利类型

  • 公开/公告日2012-06-28

    原文格式PDF

  • 申请/专利权人 MAXIM INTEGRATED PRODUCTS INC.;

    申请/专利号DE20101100142T

  • 申请日2010-01-07

  • 分类号H01L21/334;H01L27/06;H01L29/94;H01L21/768;H01L23/48;H01L21/60;H01L25/065;H01L21/02;

  • 国家 DE

  • 入库时间 2022-08-21 17:05:09

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号