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Producing germanium layer on lattice mismatched substrate, useful for producing integrated semiconductor components, comprises depositing germanium on substrate, etching back, and depositing further germanium
Producing germanium layer on lattice mismatched substrate, useful for producing integrated semiconductor components, comprises depositing germanium on substrate, etching back, and depositing further germanium
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机译:在晶格失配的基板上产生锗层,可用于生产集成半导体组件,包括在基板上沉积锗,回蚀以及再沉积锗
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摘要
Producing germanium layer on a lattice mismatched substrate (10) in a reactor, comprises: (a) depositing germanium on the substrate for producing a preliminary germanium layer (12) with a first layer thickness; (b) etching back a fraction of the first layer thickness of the preliminary germanium layer; and (c) further depositing germanium on the preliminary germanium layer remaining after etching back, until a required layer thickness of the germanium layer to be produced is obtained. An independent claim is also included for producing integrated semiconductor component exhibiting a germanium layer, comprising the above method.
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