Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it

摘要

A multilayer structure, comprises a substrate and a layer of silicon and germanium (SiGe layer) deposited heteroepitaxially thereon having the composition Si_1-xGe_x and having a lattice constant which differs from the lattice constant of silicon, and a thin interfacial layer deposited on the SiGe layer and having the composition Si_1-yGe_y, which thin interfacial layer binds threading dislocations, and at least one further layer deposited on the interfacial layer.