Memory element selecting method, involves encoding states of memory element in stable conditions, respectively, and selecting variable, where cell in one of states carries out respective contributions than another cell in other state

摘要

The method involves encoding state 0 of a memory element in stable conditions A1 and B0, and encoding state 1 of the memory element in stable conditions A0 and B1 by measurement of an electrical variable e.g. voltage (V) and capacitance (CA), of a series circuit. The electrical variable is selected, where a memory cell (A) in the state A0/A1 carries out respective contributions than another memory cell (B) in the state B0/B1. Alternating voltage drop (Vmess) is measured over the memory element, where the memory element is designed as a layer of active material. An independent claim is also included for a memory element.