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Programming method for flash memory element involves sequentially programming selected memory cells until threshold voltage is reached that is lower than target threshold voltage
Programming method for flash memory element involves sequentially programming selected memory cells until threshold voltage is reached that is lower than target threshold voltage
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机译:闪存元件的编程方法包括顺序地对选定的存储单元进行编程,直到达到低于目标阈值电压的阈值电压为止
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摘要
The flash memory element programming method involves selecting at least two memory cells in a first step and sequentially programming the selected memory cells in a first time interval in a second step until a first threshold value is reached that is lower than a target threshold voltage. An Independent claim is also included for a flash memory element.
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