首页> 外国专利> A vapor deposition method for continuously depositing and treating a thin film layer on a substrate

A vapor deposition method for continuously depositing and treating a thin film layer on a substrate

机译:一种在基板上连续沉积和处理薄膜层的气相沉积方法

摘要

What is provided is an integrated device (10) for vapor deposition of a sublimated starting material as a thin layer on a photovoltaic module substrate (14) and for subsequent vapor treatment. The apparatus (10) may include: a load vacuum chamber (28); a first vapor deposition chamber (19); and a second vapor deposition chamber (21) integrally connected so that substrates (14) carried by the device (10) are maintained at a system pressure that is less than (760) Torr. A conveyor system may be operably disposed in the apparatus (10) and configured to position substrates (14) in a serialized, controlled speed into and through the load vacuum chamber (28), into and through the first vapor deposition chamber (19) and in FIG and through the second vapor deposition chamber (21). Further, methods of making a thin film cadmium telluride based thin film photovoltaic device (14) are provided.
机译:提供了一种集成装置(10),用于将升华的起始材料作为薄层汽相沉积在光伏模块基板(14)上并用于随后的蒸汽处理。装置(10)可以包括:负载真空室(28);和第一气相沉积室(19);一体地连接有第二气相沉积室(21),以使由装置(10)承载的基板(14)保持在小于(760)Torr的系统压力下。输送机系统可以可操作地布置在设备(10)中,并且构造成以串行,受控的速度将基板(14)定位成进入并通过负载真空室(28),进入并通过第一气相沉积室(19)和通过在图1中通过第二气相沉积室(21)。此外,提供了一种制备基于碲化镉的薄膜光伏器件(14)的方法。

著录项

  • 公开/公告号DE102011056913A1

    专利类型

  • 公开/公告日2012-06-28

    原文格式PDF

  • 申请/专利权人 PRIMESTAR SOLAR INC.;

    申请/专利号DE20111056913

  • 发明设计人 SCOTT DANIEL FELDMAN-PEABODY;

    申请日2011-12-22

  • 分类号H01L31/18;H01L31/073;H01L21/677;H01L21/365;C23C14/06;C23C16/22;

  • 国家 DE

  • 入库时间 2022-08-21 17:04:56

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