Method for manufacturing high voltage component e.g. N-channel metal oxide semiconductor transistor, in mobile telephone, involves forming connection to field structure, and coupling connection with potential distributing field in substrate

摘要

The method involves providing a substrate (105) e.g. silicon substrate, with a component region e.g. source region, gate region and drain region. The substrate is provided with gate layers located on an upper surface of the substrate. The gate layers are patterned for creating gates in the gate region. A field structure (160) is located on the upper surface of the substrate, where the structure surrounds the drain region. A connection to the structure is formed and coupled with potential, which distributes an electric field in the substrate between sides of the gates and the drain region. An independent claim is also included for a component comprising a substrate.