METHOD FOR DEPOSITING NICKEL OR COBALT METAL LAYERS ON A SOLID SEMICONDUCTOR SUBSTRATE; KIT FOR IMPLEMENTING THIS METHOD

摘要

The present invention relates to a kit for the deposition of nickel or cobalt in the cavities of a semiconductor substrate such as vias through (TSV) for the realization of interconnections in integrated circuits in three dimensions. The invention also relates to a metallization process of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or coba at least one reducing agent; at least one polymer having amine functional groups, and at least one metal ion stabilizing agent; The conformity index of the nickel or cobalt layer obtained may be greater than 75%, which facilitates the subsequent filling of the vias with copper by electroplating.