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METHOD FOR DEPOSITING NICKEL OR COBALT METAL LAYERS ON A SOLID SEMICONDUCTOR SUBSTRATE; KIT FOR IMPLEMENTING THIS METHOD
METHOD FOR DEPOSITING NICKEL OR COBALT METAL LAYERS ON A SOLID SEMICONDUCTOR SUBSTRATE; KIT FOR IMPLEMENTING THIS METHOD
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机译:在固态半导体基体上沉积镍或钴金属层的方法;实施此方法的工具包
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摘要
The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: at least one metal salt of nickel or coba at least one reducing agent; at least one polymer bearing amine functions, and at least one agent stabilizing the metal ions. The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.
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