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APPARATUS AND METHOD FOR DEPOSITING GALLIUM NITRIDE FILM AND GALLIUM HYDRIDE GENERATOR
APPARATUS AND METHOD FOR DEPOSITING GALLIUM NITRIDE FILM AND GALLIUM HYDRIDE GENERATOR
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机译:沉积氮化镓膜和氢化镓发生器的装置和方法
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摘要
PROBLEM TO BE SOLVED: To efficiently deposit a high purity gallium nitride single crystal film without causing troubles such as clogging of piping.;SOLUTION: An apparatus for depositing a gallium nitride film includes: a gallium hydride generator for generating gallium hydride by reacting hydrogen gas and metal gallium and supplying gallium hydride to a substrate in the processing vessel; and a nitrogen source supply part for supplying a nitrogen source to the substrate in the processing vessel. The gallium hydride generator includes: a body vessel for forming gallium hydride by reacting hydrogen gas and metal gallium therein; a metal gallium vessel for accommodating metal gallium in the body vessel; a hydrogen gas supply part for supplying hydrogen gas into the body vessel; a heating means for heating the inside of the body vessel; and a discharge hole for discharging gallium hydride formed in the body vessel. In the body vessel, the discharge hole is arranged so as to be directly connected to the inside of the processing vessel.;COPYRIGHT: (C)2013,JPO&INPIT
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