首页> 外国专利> APPARATUS AND METHOD FOR DEPOSITING GALLIUM NITRIDE FILM AND GALLIUM HYDRIDE GENERATOR

APPARATUS AND METHOD FOR DEPOSITING GALLIUM NITRIDE FILM AND GALLIUM HYDRIDE GENERATOR

机译:沉积氮化镓膜和氢化镓发生器的装置和方法

摘要

PROBLEM TO BE SOLVED: To efficiently deposit a high purity gallium nitride single crystal film without causing troubles such as clogging of piping.;SOLUTION: An apparatus for depositing a gallium nitride film includes: a gallium hydride generator for generating gallium hydride by reacting hydrogen gas and metal gallium and supplying gallium hydride to a substrate in the processing vessel; and a nitrogen source supply part for supplying a nitrogen source to the substrate in the processing vessel. The gallium hydride generator includes: a body vessel for forming gallium hydride by reacting hydrogen gas and metal gallium therein; a metal gallium vessel for accommodating metal gallium in the body vessel; a hydrogen gas supply part for supplying hydrogen gas into the body vessel; a heating means for heating the inside of the body vessel; and a discharge hole for discharging gallium hydride formed in the body vessel. In the body vessel, the discharge hole is arranged so as to be directly connected to the inside of the processing vessel.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:为了有效地沉积高纯度氮化镓单晶膜而不会引起诸如管道堵塞的麻烦。解决方案:用于沉积氮化镓膜的设备包括:氢化镓发生器,用于通过使氢气与氢反应而生成氢化镓。金属镓,向处理容器内的基板供给氢化镓。氮源供给部,用于向处理容器内的基板供给氮源。氢化镓发生器包括:主体容器,用于通过使氢气和金属镓在其中反应而形成氢化镓。金属镓容器,用于将金属镓容纳在体内容器中;氢气供应部,用于向车身容器内供应氢气。用于加热身体容器内部的加热装置;在主体容器上形成有用于排出氢化镓的排出孔。在人体容器中,排出口布置成直接连接到处理容器的内部。;版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2013124201A

    专利类型

  • 公开/公告日2013-06-24

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20110273653

  • 发明设计人 MORITA YASUSHI;KINOSHITA HIDETOSHI;

    申请日2011-12-14

  • 分类号C30B29/38;C30B25/14;

  • 国家 JP

  • 入库时间 2022-08-21 17:02:50

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