FORMATION METHOD OF BORON-CONTAINING ACID SILICON CARBONITRIDE FILM AND FORMATION METHOD OF ACID SILICON CARBONITRIDE FILM

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a boron-containing acid silicon carbonitride film which can shorten the process time, and can contribute to enhancement of throughput.;SOLUTION: In the formation method of a boron-containing acid silicon carbonitride film for forming a boron-containing acid silicon carbonitride film on a base, a boron-containing film is formed on a base (step 1), and then a boron-containing acid silicon carbonitride film is formed by laminating a silicon carbonitride film and an acid silicon nitride film on the boron-containing film (step 2, and step 3).;COPYRIGHT: (C)2014,JPO&INPIT