PLASMA CVD APPARATUS AND METHOD FOR FORMING AMORPHOUS FILM

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of forming a Si-based amorphous film with high compactness without necessity of increasing a temperature of a substrate and with excellent stability and to provide a method for forming the Si-based amorphous film.;SOLUTION: The plasma CVD apparatus 1004 applies a DC pulse voltage to electrode pairs 1012, 1016 stored in a chamber from an induced energy storage type pulse power supply 1028.;COPYRIGHT: (C)2013,JPO&INPIT