首页> 外国专利> MIXED SINGLE CRYSTAL WAFER OF SELF-STANDING Mg-CONTAINING ZnO SYSTEM AND METHOD FOR MANUFACTURING MIXED SINGLE CRYSTAL OF Mg-CONTAINING ZnO SYSTEM USED FOR THE SAME

MIXED SINGLE CRYSTAL WAFER OF SELF-STANDING Mg-CONTAINING ZnO SYSTEM AND METHOD FOR MANUFACTURING MIXED SINGLE CRYSTAL OF Mg-CONTAINING ZnO SYSTEM USED FOR THE SAME

机译:自持含镁ZnO系统的混合单晶硅片和用于制造相同含镁ZnO系统的混合单晶的方法

摘要

PROBLEM TO BE SOLVED: To provide a mixed single crystal wafer of a self-standing Mg-congtaining ZnO system with a high composition uniformity including Li mixed as an impurity, and to provide a method for manufacturing the same.;SOLUTION: ZnO and MgO being solutes are mixed and melted, thereafter a seed crystal substrate 7 is brought into direct contact with the obtained melt 8, an Mg-containing ZnO system mixed crystal single crystal is grown by a liquid phase epitaxial growing method by continuously or intermittently pulling up the seed crystal substrate 7, thereafter the substrate 7 is removed by grinding or etching, a (-c)-face side in which the single crystal is liquid phase epitaxially grown is gound or etched, thus obtaining the mixed single crystal of a self-standing Mg-containing ZnO system.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:提供具有包括锂作为杂质的高组成均匀性的自立含镁ZnO体系的混合单晶晶片,并提供其制造方法。解决方案:ZnO和MgO混合并熔融后,使晶种基板7与得到的熔体8直接接触,通过液相外延生长法,通过连续或间歇地将其提拉,来生长含Mg的ZnO系混合晶体单晶。籽晶衬底7,然后通过研磨或蚀刻去除衬底7,对其中外延生长单晶的液相的(-c)面侧进行研磨或蚀刻,从而获得自立的混合单晶。含镁的ZnO体系。;版权所有(2013),JPO&INPIT

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