TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY CELL AND RANDOM ACCESS MEMORY INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-speed and ultra-low power consumption nonvolatile memory having high thermal stability.;SOLUTION: In a nonvolatile magnetic memory, a high-output tunnel magnetoresistance effect element in which a free layer having high thermal stability is applied is provided, and a writing method by a spin-transfer torque is applied. The tunnel magnetoresistance effect element 1 includes a free layer comprising a first ferromagnetic film 306 and a second ferromagnetic film 308, which have a body-centered cubic structure containing Co, Fe and B, and a first nonmagnetic film 307, and has a structure in which a fixed layer 3021 is stacked via an MgO insulating film 305 having a rock-salt structure (100)-oriented to the free layer.;COPYRIGHT: (C)2013,JPO&INPIT