Low efficiency droop III-nitride light emitting diode high output of {20-2-1} substrate, and high efficiency, semi-polar

摘要

Grown on {20-2-1} plane semipolar substrate, and is characterized by low efficiency droop high output, and high efficiency,, III nitride light emitting diode. In one embodiment, as compared to (Al, Ga, In) and N LED is grown on the semipolar plane of the other, (Al, Ga, In) N LED has a narrower emission spectrum width. In one embodiment, as compared to (Al, Ga, In) and N LED is grown on the semipolar plane of the other, at its output the peak emission wavelength, (Al, Ga, In) N LED is less injection I have a blue shift current dependency.