IIVI family compound semiconductor crystal and photoelectric conversion functional device

摘要

PROBLEM TO BE SOLVED: To provide a II-VI compound semiconductor crystal, having a contact layer that can be controlled to a desired conductivity, and to provide a photoelectric conversion functional element which uses the crystal as a substrate. ;SOLUTION: A ZnTe-based compound semiconductor crystal is constituted to have a superlattice layer, formed by laminating n-type CdSe and n-type ZnTe upon another or an n-type contact layer containing a ZnCdSeTe graded layer on a ZnTe-based compound semiconductor layer. Similarly, a CdSe-based compound semiconductor crystal is constituted to have a superlattice layer, formed by laminating p-tye CdSe and p-type ZnTe upon another or a p-type contact layer including a ZnCdSeTe graded layer on a CdSe-based compound semiconductor layer.;COPYRIGHT: (C)2003,JPO