Positive die resist pattern formation manner and developer for positive die resist pattern formation

摘要

PPROBLEM TO BE SOLVED: To provide a method of forming resist patterns for highly precisely and stably forming fine patterns having excellent nano-edge roughness. PSOLUTION: The method of forming the resist patterns includes selectively exposing resist films formed on a substrate and having a film thickness of ≤50 nm and developing the resist film by using a developing agent for forming the resist patterns being tetra-methyl ammonium hydroxide aqueous solution having concentration of ≤1.2 mass%. PCOPYRIGHT: (C)2010,JPO&INPIT