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METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE
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机译:碳化硅单晶,碳化硅单晶锭和碳化硅单晶基体的制备方法
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摘要
PROBLEM TO BE SOLVED: To provide: a method of producing a silicon carbide single crystal from which a silicon carbide single crystal substrate having little basal-plane dislocation and excellent in crystallinity can be obtained; a silicon carbide single crystal ingot thus obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot.;SOLUTION: This invention relates to: the method of producing the high-quality silicon carbide single crystal that has little basal-plane dislocation, wherein the basal-plane dislocation is reduced by structurally converting the basal-plane dislocation into a threading edge dislocation during the crystal growing through a sublimation recyrstallization method; the silicon carbide single crystal ingot obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot.;COPYRIGHT: (C)2013,JPO&INPIT
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