EDGE TERMINATION STRUCTURE FOR SILICON CARBIDE DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE DEVICE INCLUDING EDGE TERMINATION STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide an improved edge termination structure of a silicon carbide device.;SOLUTION: The edge termination structure of a silicon carbide device has a plurality of floating guard rings 34 of concentric circle arranged at predetermined intervals, in a silicon carbide layer, so as to surround at least the silicon carbide base junction, an insulation layer provided on the floating guard rings, and a silicon carbide surface charge compensation region 38 provided between the floating guard rings closely to the surface of the silicon carbide layer. A silicon nitride layer 56 is provided on the silicon carbide layer, and an organic protective layer 66 is provided on the silicon nitride layer. An oxide film layer may exist between the silicon nitride layer and the surface of the silicon carbide layer. Formation of the edge termination structure and a manufacturing method are also disclosed.;COPYRIGHT: (C)2013,JPO&INPIT