Accumulation manner of the polycrystal silicone films which have random grain structure, manner and the manner null which forms the tungsten/silicon which make the polycrystal silicon gate electrodes accumulate which have the random grain structure which is doped composite membrane

摘要

Method and the device in order to form the polycrystal silicon membranes. According to this invention, the process gas blend which includes with the silicon source gas and H the dilution gas blend which includes₂ and the inert gas is supplied to the chamber. The polycrystal silicon membranes are formed from that process gas blend. Selective figure 1