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Base substance film, back grinding film, and its production manner for multilayer back grinding

机译:基材膜,背磨膜及其多层背磨的生产方式

摘要

P To provide a substrate film for monolayer or multilayer back grinding that prevents a semiconductor wafer from being warped easily even if the substrate film is stuck to the semiconductor wafer in the back grinding process of the thin-type semiconductor wafer and has excellent dimensional stability and to provide a back grinding film. PSOLUTION: In the substrate film for multilayer back grinding, layers A, B and C are laminated in this order. The layer A contains a resin composition made of 0-70 wt.% of amorphous olefin and 30-100 wt.% of polypropylene-based resin. The layer B contains a resin composition made of 15-100 wt.% of amorphous olefin and 0-85 wt.% of polypropylene-based resin. The layer C contains a thermoplastic resin having rubber elasticity. The present invention relates to the substrate film for multilayer back grinding and the method of manufacturing the substrate film. PCOPYRIGHT: (C)2010 and JPO& INPIT
机译:<P>提供一种即使在薄型半导体晶片的背面研磨工序中将基板膜粘贴在半导体晶片上也能够防止半导体晶片容易翘曲的单层或多层背面研磨用的基底膜,并且尺寸优异。稳定并提供背面研磨膜。

解决方案:在用于多层背面研磨的基材膜中,层A,B和C依次层叠。层A包含由0-70重量%的无定形烯烃和30-100重量%的聚丙烯基树脂制成的树脂组合物。层B包含由15-100重量%的无定形烯烃和0-85重量%的聚丙烯基树脂制成的树脂组合物。层C包含具有橡胶弹性的热塑性树脂。多层背磨用基材膜及其制造方法技术领域本发明涉及多层背磨用基材膜及其制造方法。

版权:(C)2010和JPO&INPIT

著录项

  • 公开/公告号JP5328193B2

    专利类型

  • 公开/公告日2013-10-30

    原文格式PDF

  • 申请/专利权人 グンゼ株式会社;

    申请/专利号JP20080078459

  • 发明设计人 佐合 茂;斎藤 隆太;岡川 真明;

    申请日2008-03-25

  • 分类号H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-21 16:56:47

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