The memory belt and form structure the device and the manner which use the congruence side wall patterning for 4 time half pitch relief patterning

摘要

This invention, the memory belt and the device which produces structure, offers manner and the system making use of the congruence side wall patterning for 4 time half pitch relief patterning. This invention adjoining especially and the feature which 1st it is allotted to the upper part of the substrate form the feature from templet formation, forming the small feature the side wall spacer of thing and the half pitch which form the side wall spacer of half pitch as the hard mask by using 2nd depending upon the templet inside layer and, adjoining to a smaller feature, includes with the fact that it forms the conductor feature from conductor layer the side wall spacer of thing and 1/4 pitch which form the side wall spacer of 1/4 pitch as the hard mask by using. Many additional feature is disclosed.