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Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterning
Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterning
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机译:使用双侧壁图案进行四次半间距浮雕图案形成存储器线和结构的设备和方法
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摘要
The present invention provides apparatus, methods, and systems for fabricating memory lines and structures using double sidewall patterning for four times half pitch relief patterning. The invention includes forming features from a first template layer disposed above a substrate, forming half-pitch sidewall spacers adjacent the features, forming smaller features in a second template layer by using the half-pitch sidewall spacers as a hardmask, forming quarter-pitch sidewall spacers adjacent the smaller features, and forming conductor features from a conductor layer by using the quarter-pitch sidewall spacers as a hardmask. Numerous additional aspects are disclosed.
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