APPARATUS AND METHODS OF FORMING MEMORY LINES AND STRUCTURES USING DOUBLE SIDEWALL PATTERNING FOR FOUR TIMES HALF PITCH RELIEF PATTERNING

摘要

present invention is 4 1/2 pitch relief (four times half pitch relief) for double patterning sidewalls apparatus for fabricating a memory line and structures using a patterned , provides methods , and systems . The present invention is the 1/ 2- pitch side wall spacer as the forming the features from the first template layer disposed on the substrate , forming a 1/ 2- pitch sidewall spacer near the feature portion , a hard mask (hardmask) and forming the features in the compact by using a second template layer , wherein the features forming the small 1/ 4- pitch near the sidewall spacers , and the 1/ 4- pitch using sidewall spacers from the conductive layer as a hardmask conductor characterized includes forming the portions . A number of additional features are disclosed. ;