Magneto-resistance effect element, magnetic memory cell and magnetic random access memory using the same

摘要

PPROBLEM TO BE SOLVED: To provide a high speed ultra-low power consumption nonvolatile memory, having a high temperature stability in a zero magnetic field. PSOLUTION: An insulating layer 304 and a non-magnetic conductive layer 305 are laminated to a ferromagnetic free layer 303 in a tunnel magnetoresistance effect film 1, comprising the non-volatile magnetic memory having a writing method by a spin transfer torque. PCOPYRIGHT: (C)2008,JPO&INPIT