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Reduction of dislocations in nonpolar gallium nitride thin films.
Reduction of dislocations in nonpolar gallium nitride thin films.
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机译:减少非极性氮化镓薄膜中的位错。
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摘要
Non-polar (1120) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (1120) a-plane GaN thin films
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