The approach place exposure device, approach place exposure method and formation method of resist pattern, the mask basic material which

摘要

PROBLEM TO BE SOLVED: To provide a near-field exposure mask capable of ensuring intimate contact between the mask and an object to be exposed in a large area by a simple mechanism even when waving is present in the object substrate to be exposed, and to provide a near-field exposure apparatus and a near-field exposure method.;SOLUTION: The near-field exposure mask includes a light blocking film 102 having an opening 103 smaller than a wavelength of exposure light, and a mask base material 101 holding the light blocking film, and is configured and positioned to effect exposure of an object to be exposed to near-field light generated corresponding to the opening during contact thereof with the object to be exposed. The mask base material comprises a synthetic resin material transparent to the exposure light and having Young's modulus in a range from 1 GPa to 10 GPa.;COPYRIGHT: (C)2008,JPO&INPIT