Silicon-containing resist underlayer film forming composition for forming a silicon-containing resist underlayer film for electron beam curing

摘要

PROBLEM TO BE SOLVED: To provide a resist underlayer film forming composition used in a lithography process of semiconductor device manufacture.;SOLUTION: The resist underlayer film forming composition cured by electron beam irradiation on a resist underlayer film used as a under layer of a photoresist in a lithography process of semiconductor device manufacture contains a polymerizable substance. The polymerizable substance is a compound having at least one reactive group which is polymerizable upon electron beam irradiation. The reactive group which is polymerizable upon electron beam irradiation is a reactive group having a carbon-carbon unsaturated multiple bond or a reactive group having an epoxy group. The reactive group having a carbon-carbon unsaturated multiple bond is an acrylate group, a methacrylate group or a vinyl ether group.;COPYRIGHT: (C)2009,JPO&INPIT