The new silicon precusor in order to produce the ultralow K membrane which possesses high mechanical qualities with the plasma promotion chemical evaporation

摘要

A method for depositing a low dielectric constant film ON a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si— CX— Si or — Si— O— (CH2) n— O— Si—. Low dielectric constant films provided herein include films that include Si— CX— Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties and a desirable dielectric constant.