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The organic layer which is doped in the organicity - inorganic hybrid die junction component which uses the oxidation reduction reaction and the organicity

机译:掺杂在有机物中的有机层-利用氧化还原反应和有机物的无机杂化管芯结成分

摘要

Provided are an organic-inorganic hybrid junction device in which organic and inorganic materials are connected by junction, and a depletion layer is formed at a junction interface, and an organic photovoltaic cell using the same. A basic metal oxide solution is applied to a top surface of a P-doped organic layer. The basic metal oxide solution has N-type characteristics. An oxidation-reduction reaction occurs in response to the application of the basic metal oxide solution at a junction interface of the organic layer, and the metal oxide layer is simultaneously gelated. A free charge is removed from a surface region of the P-doped organic layer by the oxidation-reduction reaction at the interface, which is converted into a depletion region. According to the introduction of the depletion region, P-N junction occurs, and thus the device has a diode characteristic in an electrical aspect. Also, an organic photovoltaic cell including the organic layer, the depletion layer and the metal oxide layer is fabricated.
机译:提供一种有机-无机杂化接合装置以及使用该有机-无机杂化接合装置的有机光伏电池,其中有机层和无机材料通过接合而连接,并且在接合界面处形成耗尽层。将碱性金属氧化物溶液施加到P掺杂的有机层的顶表面。碱性金属氧化物溶液具有N型特性。响应于在有机层的接合界面处施加碱性金属氧化物溶液而发生氧化还原反应,并且同时使金属氧化物层胶凝。通过界面处的氧化-还原反应,从P-掺杂的有机层的表面区域去除自由电荷,该自由电荷被转换为耗尽区域。根据耗尽区的引入,发生P-N结,因此该器件在电学方面具有二极管特性。此外,制造包括有机层,耗尽层和金属氧化物层的有机光伏电池。

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