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Oxidizing treating the indium tin oxide precursive body and that indium tin oxide film, and the organicity

机译:氧化处理氧化铟锡前驱体和氧化铟锡膜及其有机性

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of easily forming an indium tin oxide (ITO) film having excellent conductivity even if being burned at a low temperature.;SOLUTION: The salts of indium and tin are dissolved in the mother liquid of an organic solvent to obtain an ITO precursor comprising an indium-tin compound precipitate. The ITO precursor can be used as a dispersion or viscous liquid, and a transparent ITO conductive film can be formed by applying to a substrate. In the method of producing the precursor, it is preferable to generate the indium-tin compound precipitate by oxidation treatment of the mother liquid of the organic solvent and pH adjustment.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:解决的问题:提供一种即使在低温下燃烧也能够容易地形成具有优异导电性的氧化铟锡(ITO)膜的技术。解决方案:铟和锡的盐溶解在玻璃的母液中。有机溶剂以获得包含铟锡化合物沉淀物的ITO前体。 ITO前体可以用作分散液或粘稠液体,并且可以通过施加至基板来形成透明的ITO导电膜。在制备前体的方法中,优选通过有机溶剂的母液的氧化处理和pH值的调节来产生铟-锡化合物沉淀物。;版权所有:(C)2006,JPO&NCIPI

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