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首页> 外文期刊>Journal of Applied Physics >Work-function changes of treated indium-tin-oxide films for organic light- emitting diodes investigated using scanning surface-potential microscopy
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Work-function changes of treated indium-tin-oxide films for organic light- emitting diodes investigated using scanning surface-potential microscopy

机译:使用扫描表面电势显微镜研究了有机发光二极管处理过的铟锡氧化物薄膜的功函数变化

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摘要

Local surface work-function (WF) measurement on indium-tin-oxide (ITO) films prepared by different cleaning methods for use as anode materials in organic light-emitting diodes were studied using scanning surface-potential microscopy. The ITO WF changes with standard wet-cleaning treatment correspond directly to asperities on the film surface. The maximum difference value (MDV) in the local WF reached 0.41 eV. However, after wet-cleaning ITO with the ultraviolet ozone or O-plasma treatment, the WF distribution is more uniform than the original distribution. Owing to the sufficient ITO surface oxidization, the mean local WF value increases effectively to more than 5.00 eV and the MDV is less than 0.05 eV. Furthermore, the changes in roughness and conductivity on the ITO surface at different treatment times are also discussed. The proper exposure time for the O-plasma treatment can thereby be determined.
机译:使用扫描表面电势显微镜研究了通过不同清洗方法制备的用作有机发光二极管阳极材料的氧化铟锡(ITO)膜的局部表面功函数(WF)。标准湿清洗处理后的ITO WF变化直接对应于薄膜表面的凹凸。本地WF的最大差值(MDV)达到0.41 eV。但是,在用紫外线臭氧或O-等离子体处理湿法清洁ITO之后,WF分布比原始分布更均匀。由于充分的ITO表面氧化,平均局部WF值有效增加到大于5.00 eV,MDV小于0.05 eV。此外,还讨论了在不同处理时间下ITO表面粗糙度和电导率的变化。由此可以确定用于O-血浆处理的合适的暴露时间。

著录项

  • 来源
    《Journal of Applied Physics 》 |2005年第7期| p.073713.1-073713.4| 共4页
  • 作者

    Sy-Hann Chen;

  • 作者单位

    Department of Materials Engineering, Mingchi University of Technology, Taishan, Taipei Hsien 243, Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学 ;
  • 关键词

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