Being the baseplate for growth in order to grow

摘要

Although compound semiconductor layer, especially, Al based compound semiconductor layer epitaxial the fact that surface discontinuity of the type which hirotsuku condition defect differs to the occasion where it grows, occurs is controlled, the baseplate for effective growth is offered.Direction of the vector which (100) projects normal vector of the principal plane to the surface in the baseplate for compound semiconductor growth which designates the crystal face which inclines with specified off angle (100) vis-a-vis the surface as the principal plane, and, [the 0-11] direction, [the 01-1] direction, [011] direction, or [the 0-1-1] the angle which each direction of direction forms that tried is under the 35, on the baseplate for the said growth compound semiconductor layer epitaxial to grow tried.