首页> 外国专利> Being ion source for the mannered null ion beam evaporation treatment which includes the process which impresses voltage vis-a-vis the ion source for ion beam evaporation treatment

Being ion source for the mannered null ion beam evaporation treatment which includes the process which impresses voltage vis-a-vis the ion source for ion beam evaporation treatment

机译:用作经过合理处理的零离子束蒸发处理的离子源,包括对离子束蒸发处理的离子源施加电压的过程

摘要

PROBLEM TO BE SOLVED: To provide an ion source for ion beam deposition comprising multiple anodes, wherein the ion source deposits multiple zones of a source material and thicknesses of at least two of the multiple zones are different.;SOLUTION: When depositing carbon by ion beam deposition, it is often not possible for space reasons or practical for cost reasons to utilize two or more ion sources as the number of process chambers is limited. However, the ion source comprises multiple concentric anodes and different voltages are applied to them, so the thicknesses of at least two of the multiple zones are different.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种包括多个阳极的用于离子束沉积的离子源,其中该离子源沉积源材料的多个区域,并且多个区域中至少两个的厚度不同。由于沉积腔室的数量有限,因此通常出于空间原因或出于成本原因而无法利用两个或多个离子源进行离子束沉积。然而,离子源包含多个同心阳极,并且向它们施加了不同的电压,因此多个区域中至少两个区域的厚度是不同的。;版权所有:(C)2010,JPO&INPIT

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