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Manufacturing method of nitride single crystal substrate and manufacturing method of nitride semiconductor light emitting device using the same
Manufacturing method of nitride single crystal substrate and manufacturing method of nitride semiconductor light emitting device using the same
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机译:氮化物单晶衬底的制造方法以及使用该氮化物单晶衬底的氮化物半导体发光器件的制造方法
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摘要
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride based single crystal substrate includes forming a ZnO layer on a base substrate; forming a low-temperature nitride buffer layer on the ZnO layer using dimethyl hydragine (DMHy) as an N source; growing a nitride single crystal on the low-temperature nitride buffer layer; and separating the nitride single crystal from the base substrate by chemically eliminating the ZnO layer.
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