Implication the semiconductor lamination structure which it could crystallize could grow on

摘要

PROBLEM TO BE SOLVED: To reduce degradation of a yield of an element due to separation of a translucent electrode layer without inhibiting a light emission characteristic, and to remarkably improve electrostatic discharge resistance to stabilize an element characteristic, in a nitride-based semiconductor light-emitting element.;SOLUTION: The nitride-based semiconductor light-emitting element includes a semiconductor layered structure crystal-grown on a substrate. The semiconductor layered structure includes at least a first conductivity-type nitride-based semiconductor layer, a nitride-based semiconductor active layer, and a second conductivity-type nitride-based semiconductor layer in this order. The semiconductor layered structure includes a surface recessed part inevitably generated in the crystal growth thereof, wherein the surface recessed part is embedded by an embedding layer of a first conductive oxide, and further includes an electrode layer of a second conductive oxide formed to cover the upper surface of the embedding layer and the upper surface of the semiconductor layered structure. The first conductive oxide has large electric resistance compared with that of the second conductive oxide.;COPYRIGHT: (C)2011,JPO&INPIT