METHOD FOR GROWING COMPOUND SEMICONDUCTOR LAYER HAVING QUANTUM WELL STRUCTURE AND FORMATION OF LAMINATED STRUCTURE OF COMPOUND SEMICONDUCTOR THIN FILM

摘要

PURPOSE: To improve the surface steepness and flatness of a well layer by stopping the epitaxial growth of a barrier layer for a fixed period by interrupting part of the raw material for forming the barrier layer after the well layer is epitaxially grown. ;CONSTITUTION: The raw material for forming a well layer is prepared by adding a material which makes a band gap narrower to the raw material for forming a barrier layer. As a result, raw materials for gallium and indium are supplied to a reactor and a Ga_1-xIn_xAs layer 32 is continuously grown on a GaAs layer 30. The Ga_1-xIn_xAs layer 32 becomes a well layer. During the formation of the barrier layer, the crystal growth is interrupted by intentionally interrupting the supply of trimethyl gallium and trimethyl indium to the reactor.;COPYRIGHT: (C)1995,JPO