The silicon wafer which is produced with the quantitative evaluation method of the atomic hole concentration which exists in the silicon wafer, the production manner, and particular production manner of the silicon wafer

摘要

From the silicon wafer which is produced with quantitative evaluation method, the production manner, and the particular production manner which of the silicon wafer can evaluate the atomic hole concentration which exists efficiently in the silicon wafer is offered. As while containment silicon wafer 26 in fixed temperature, when the external magnetic field is impressed in aforementioned silicon wafer 26, ultrasonic impulse it oscillates, it receives the measurement wave impulse which is spread aforementioned ultrasonic impulse in aforementioned silicon wafer 26, it has with the detection process which detects the phase contrast of aforementioned ultrasonic impulse and aforementioned measurement wave impulse and the calculation process which calculates elastic coefficient from aforementioned phase contrast. Changing the aforementioned external magnetic field, you evaluate the atomic hole concentration in aforementioned silicon wafer 26 by calculating the aforementioned elastic coefficient which corresponds to the change of the particular external magnetic field.