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SEMICONDUCTORS BASED ON SUBSTITUTED 1BENZOTHIENO3,2-b1-BENZOTHIOPHENES

机译:基于取代的[1]苯并噻吩并[3,2-b] [1]-苯并噻吩的半导体

摘要

The present invention relates to compounds of the general formula (I) wherein Z corresponds a to — a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups—P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHal−nR23−n(R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), — a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl), or — a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups —P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups —SO3H, halosilyl radicals —SiHalnR23−n (R2═C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals —Si(OR3)3 (R3═C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).; embedded image
机译:本发明涉及通式(I)的化合物,其中Z对应于-被卤素,膦酸或膦酸取代的-C 1 -C 22 -烷基基团酸酯基-P(O)(OR 1 2 (其中基团R 1 可以相同或不同,并且对应于氢原子或C 1 -C 12 -烷基),磺酸基团-SO 3 H,卤代甲硅烷基-SiHal n R 2 3-n (R 2 ═C 1 -C 18 -烷基,n = 1至3的整数),硫羟基或三烷氧基甲硅烷基基团-Si(OR 3 3 (R 3 ═C 1 -C 18 -烷基),—一个C 5 -C 12 -被取代的环烷基卤素,膦酸或膦酸酯基团-P(O)(OR 1 2 (其中基团R 1 可以相同或不同且对应于氢原子或C 1 -C 12 -烷基),磺基酸基团-SO 3 H,卤硅烷基-SiHal -n R 2 3-n (R < Sup> 2 ═C 1 -C 18 -烷基,n = 1至3的整数),硫羟基或三烷氧基甲硅烷基基团-Si(OR < Sup> 3 3 (R 3 ═C 1 -C 18 -烷基), —由卤素,膦酸或膦酸酯取代的噻吩基,吡咯基,呋喃基或吡啶基基团中的C 6 -C 14 -芳基或杂芳基基团—P(O)(OR 1 2 (其中基团R 1 可以相同或不同,并且对应于氢原子或C 1 -C 12 -烷基),磺酸基-SO 3 H,卤代甲硅烷基-SiHal n R 2 3-n (R 2 ═C 1 -C 18 -烷基,n = 1到3的整数),巯基或三烷氧基甲硅烷基基团-Si(OR 3 3 (R 3 ═C 1 -C 18 -烷基)或-C 任选被卤素,膦酸或膦酸酯基团-P(O)(OR 1 2取代的7 -C 30 -芳烷基(其中基团R 1 可以相同或不同,并且对应于氢原子或C 1 -C 12 -烷基),磺酸基团-SO 3 H,卤代甲硅烷基基团-SiHal n R 2 3-n (R 2 ═C 1 -C 18 -烷基,n = 1至3的整数),巯基或三烷氧基甲硅烷基基团-Si(OR 3 3 (R 3 ═C 1 -C 18 -烷基)或三烷基甲硅烷基R 5 R 6 R 7 Si,其中R 5 ,R 6 ,R 7 彼此独立地是相同或不同的C 1 -C 18 -烷基。本发明还涉及半导体层,电子部件,电子部件的制造方法,可通过该方法获得的电子部件以及通式(I)的化合物的用途。 “嵌入式图像”

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