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SEMICONDUCTORS BASED ON SUBSTITUTED 1BENZOTHIENO3,2-B1-BENZOTHIOPHENES
SEMICONDUCTORS BASED ON SUBSTITUTED 1BENZOTHIENO3,2-B1-BENZOTHIOPHENES
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机译:基于取代的[1]苯并噻吩并[3,2-B] [1]-苯并噻吩的半导体
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摘要
The present invention relates to compounds of the general formula (I) wherein Z corresponds a to - a C1-C22-alkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n(R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), - a C5-C12-cycloalkyl radical substituted by halogen, phosphonic acid or phosphonic acid ester groups-P(O) (OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHal-nR23-n(R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), - a C6-C14-aryl radical or heteroaryl radical from the group of the thienyl, pyrryl, furyl or pyridyl radicals substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl), or - a C7-C30-aralkyl radical optionally substituted by halogen, phosphonic acid or phosphonic acid ester groups -P(O)(OR1)2 (wherein the radicals R1 can be identical or different and correspond to a hydrogen atom or C1-C12-alkyl), sulphonic acid groups -SO3H, halosilyl radicals -SiHalnR23-n (R2=C1-C18-alkyl, n=an integer from 1 to 3), thiol groups or trialkoxysilyl radicals -Si(OR3)3 (R3=C1-C18-alkyl) or a trialkylsilyl radical R5R6R7Si, in which R5, R6, R7 independently of each other are identical or different C1-C18-alkyl radicals. The present invention also relates to a semiconductor layer, an electronic component, a process for the production of an electronic component, the electronic component obtainable by this process and the use of compounds of the general formula (I).
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