Enhancing the Photovoltaic Response of CZTS Thin-Films

摘要

In one embodiment, a method includes depositing a precursor material outwardly from a substrate, introducing a source-material into proximity with the precursor material, depositing a dopant, and annealing the precursor layer in proximity with of the source-material layer. The precursor material may include Cu, Zn, and Sn, and one or more of S or Se. The source material may include Sn and one or more of S or Se. The dopant may be deposited in sufficient proximity to the precursor material such that the average grain size of the precursor material is increased by the presence of the dopant and is greater than 200 nm. The annealing of the precursor material may be performed in a constrained volume.