首页>
外国专利>
PROCESS FOR PRODUCING A P-N JUNCTION IN A CZTS-BASED PHOTOVOLTAIC CELL AND CZTS-BASED SUPERSTRATE PHOTOVOLTAIC CELL
PROCESS FOR PRODUCING A P-N JUNCTION IN A CZTS-BASED PHOTOVOLTAIC CELL AND CZTS-BASED SUPERSTRATE PHOTOVOLTAIC CELL
展开▼
机译:在基于CZTS的光伏电池和基于CZTS的超级光伏电池中产生P-N结的过程
展开▼
页面导航
摘要
著录项
相似文献
摘要
The invention relates to a process for producing a p-n junction in a photovoltaic cell made of thin CZTS-based films, comprising: a) a step of depositing a film of precursors containing zinc, tin and copper, the amount of zinc being larger than that required to convert the precursors into a CZTS type photovoltaic material and b) a step of annealing the precursors, under a sulphur- and/or selenium-containing atmosphere, so as to obtain a photovoltaic film made of CZTS and a buffer layer made of ZnS1-xSex, where x is comprised between 0 and 1.
展开▼
机译:本发明涉及在由薄的基于CZTS的膜制成的光伏电池中产生pn结的方法,其包括:a)沉积包含锌,锡和铜的前体的膜的步骤,锌的量大于锌的量。将前体转变成CZTS型光伏材料所需的步骤; b)在含硫和/或硒的气氛下对前体进行退火的步骤,以获得由CZTS制成的光伏膜和由ZnS制成的缓冲层 1-x Sub> Se x Sub>,其中x介于0和1之间。
展开▼