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SILICIDATION AND/OR GERMANIDATION ON SIGE OR GE BY COSPUTTERING NI AND GE AND USING AN INTRALAYER FOR THERMAL STABILITY
SILICIDATION AND/OR GERMANIDATION ON SIGE OR GE BY COSPUTTERING NI AND GE AND USING AN INTRALAYER FOR THERMAL STABILITY
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机译:通过共腐蚀Ni和GE并使用层间热稳定性来对SIGE或GE进行硅化和/或发芽
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摘要
Formation of a semiconductor device with NiGe or NiSiGe and with reduced consumption of underlying Ge or SiGe is provided. Embodiments include co-sputtering nickel (Ni) and germanium (Ge), forming a first Ni/Ge layer on a Ge or silicon germanium (SiGe) active layer, depositing titanium (Ti) on the first Ni/Ge or Ni/Si/Ge layer, forming a Ti intermediate layer, co-sputtering Ni and Ge on the Ti intermediate layer, forming a second Ni/Ge layer, and performing a rapid thermal anneal (RTA) process.
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