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Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces
Light Emitting Diode (LED) Using Three-Dimensional Gallium Nitride (GaN) Pillar Structures with Planar Surfaces
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机译:使用具有平面表面的三维氮化镓(GaN)支柱结构的发光二极管(LED)
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摘要
A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer.
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