RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN

摘要

There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1):; O—Ar₁  Formula (1);(in Formula (1), Ar₁ is a C_6-50 arylene group or an organic group containing a heterocyclic group), a unit structure of Formula (2):; O—Ar₂—O—Ar₃-T-Ar₄  Formula (2);(in Formula (2), Ar₂, Ar₃, and Ar₄ are individually a C_6-50 arylene group or an organic group containing a heterocyclic group; and T is a carbonyl group or a sulfonyl group), or a combination of the unit structure of Formula (1) and the unit structure of Formula (2). The organic groups of Ar₁ and Ar₂ containing arylene group may be organic groups containing a fluorene structure.