RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN

摘要

A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2):; O—Ar₂—O—Ar₃-T-Ar₄  Formula (2);where Ar₂, Ar₃, and Ar₄ are individually a C_6-50 arylene group or an organic group containing a heterocyclic group; at least one of Ar₃ and Ar₄ is a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.