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Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers
Lateral PNP Bipolar Transistor Formed with Multiple Epitaxial Layers
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机译:具有多个外延层的横向PNP双极晶体管
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摘要
A lateral bipolar transistor with deep emitter and deep collector regions is formed using multiple epitaxial layers of the same conductivity type. Deep emitter and deep collector regions are formed without the use of trenches. Vertically aligned diffusion regions are formed in each epitaxial layer so that the diffusion regions merged into a contiguous diffusion region after annealing to function as emitter or collector or isolation structures. In another embodiment, a lateral trench PNP bipolar transistor is formed using trench emitter and trench collector regions. In yet another embodiment, a lateral PNP bipolar transistor with a merged LDMOS transistor is formed to achieve high performance.
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