首页> 外国专利> PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS AND METHOD FOR IMPROVING TOPOLOGICAL UNIFORMITY OF THE PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS BASED ON THIN-FILM ELECTRONICS

PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS AND METHOD FOR IMPROVING TOPOLOGICAL UNIFORMITY OF THE PHOTODIODE AND OTHER SENSOR STRUCTURES IN FLAT-PANEL X-RAY IMAGERS BASED ON THIN-FILM ELECTRONICS

机译:平板电子X射线成像仪中的光电二极管和其他传感器结构,以及基于薄膜电子的改进平板X射线成像仪中光电二极管和其他传感器结构的拓扑均匀性的方法

摘要

A radiation sensor including a scintillation layer configured to emit photons upon interaction with ionizing radiation and a photodetector including in order a first electrode, a photosensitive layer, and a photon-transmissive second electrode disposed in proximity to the scintillation layer. The photosensitive layer is configured to generate electron-hole pairs upon interaction with a part of the photons. The radiation sensor includes pixel circuitry electrically connected to the first electrode and configured to measure an imaging signal indicative of the electron-hole pairs generated in the photosensitive layer and a planarization layer disposed on the pixel circuitry between the first electrode and the pixel circuitry such that the first electrode is above a plane including the pixel circuitry. A surface of at least one of the first electrode and the second electrode at least partially overlaps the pixel circuitry and has a surface inflection above features of the pixel circuitry. The surface inflection has a radius of curvature greater than one half micron.
机译:辐射传感器包括:闪烁层,被配置为在与电离辐射相互作用时发射光子;以及光检测器,其依次包括第一电极,感光层和可透射光子的第二电极,该第一电极设置在闪烁层附近。感光层被配置为在与一部分光子相互作用时产生电子-空穴对。辐射传感器包括像素电路,该像素电路电连接到第一电极并被配置为测量指示在光敏层中产生的电子-空穴对的成像信号以及设置在像素电路上的在第一电极和像素电路之间的平坦化层,使得第一电极在包括像素电路的平面上方。第一电极和第二电极中的至少一个的表面至少部分地与像素电路重叠,并且在像素电路的特征上方具有表面弯曲。表面弯曲的曲率半径大于一半微米。

著录项

  • 公开/公告号US2013292573A1

    专利类型

  • 公开/公告日2013-11-07

    原文格式PDF

  • 申请/专利权人 LARRY E. ANTONUK;

    申请/专利号US201313932519

  • 发明设计人 LARRY E. ANTONUK;

    申请日2013-07-01

  • 分类号G01T1/24;

  • 国家 US

  • 入库时间 2022-08-21 16:49:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号